INFLUENCE OF SELECTIVE TUNGSTEN DEPOSITION ON SHALLOW JUNCTION LEAKAGE.

G. E. Georgiou, J. M. Brown, M. L. Green, R. Liu, D. S. Williams, R. S. Blewer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report on the onset of reverse bias diode leakage induced by CVD selective tungsten deposition on (a) shallow n** plus (As)/p diodes made by implantation into silicon and (b) n** plus (As or P)/p or p** plus (BF//2)/n diodes made by implantation into CoSi//2. Tungsten, nominally 1000 Armstrom thick, was selectively deposited in a hot wall tubular reactor using either a one-step or a two-step deposition sequence at 290 degree C. The n** plus (As)/p junctions show an increase in leakage population after tungsten deposition, as the junction depth decreases. The two-step process was found to produce greater leakage in shallow n** plus (As)/p junctions than the one-step process. Arsenic implanted junctions show severe degradation in the leakage distribution of shallow diodes beneath CoSi//2. In contrast to arsenic, shallow junctions made by outdiffusion of phosphorus or boron implanted into CoSi//2 do not show significant changes in leakage population after selective tungsten deposition. Junction leakage measurements, and their temperature dependence, will be correlated with transmission electron micrographs.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsEliot K. Broadbent
PublisherMaterials Research Soc
Pages227-234
Number of pages8
ISBN (Print)0931837669
StatePublished - Dec 1 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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