TY - GEN
T1 - Influence of substrate temperature and RF power on the formation of ZnO nanorods for solar driven hydrogen production
AU - Shet, Sudhakar
AU - Wang, Heli
AU - Yan, Yanfa
AU - Ravindra, Nuggehalli
AU - Turner, John
AU - Al-Jassim, Mowafak
PY - 2012
Y1 - 2012
N2 - We report on the effects of substrate temperature and RF power on the formation of aligned nanorods in ZnO thin films. ZnO thin films were sputter-deposited in mixed Ar and N2 gas ambient at various substrate temperatures and RF power. At low substrate temperatures (below 300°C), ZnO nanorods do not form regardless of RF power. High RF power helps to promote the formation of aligned ZnO nanorods. However, lower RF power usually lead to ZnO films with better crystallinity at the same substrate temperatures in mixed Ar and N2 gas ambient and therefore better photoelectrochemieal (PEC) response.
AB - We report on the effects of substrate temperature and RF power on the formation of aligned nanorods in ZnO thin films. ZnO thin films were sputter-deposited in mixed Ar and N2 gas ambient at various substrate temperatures and RF power. At low substrate temperatures (below 300°C), ZnO nanorods do not form regardless of RF power. High RF power helps to promote the formation of aligned ZnO nanorods. However, lower RF power usually lead to ZnO films with better crystallinity at the same substrate temperatures in mixed Ar and N2 gas ambient and therefore better photoelectrochemieal (PEC) response.
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U2 - 10.1002/9781118511428.ch12
DO - 10.1002/9781118511428.ch12
M3 - Conference contribution
AN - SCOPUS:84871496715
SN - 9781118273272
T3 - Ceramic Transactions
SP - 115
EP - 120
BT - Advances in Synthesis, Processing, and Applications of Nanostructures
PB - American Ceramic Society
T2 - Advances in Synthesis, Processing, and Applications of Nanostructures - Materials Science and Technology 2011 Conference, MS and T 2011
Y2 - 16 October 2011 through 20 October 2011
ER -