@inproceedings{43b528409cb84f5dac8dd0266cee967d,
title = "Influence of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films",
abstract = "Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation in ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.",
keywords = "Bandgap, Co-doping, Crystallinity, Gas ambient, N concentration, Photoelectrochemical, RF power, Sputter, Substrate temperature, ZnO",
author = "Sudhakar Shet and Heli Wang and Nuggehalli Ravindra and Yanfa Yan and John Turner and Mowafak Al-Jassim",
year = "2011",
doi = "10.1002/9781118062111.ch19",
language = "English (US)",
isbn = "9781118029459",
series = "TMS Annual Meeting",
publisher = "Minerals, Metals and Materials Society",
pages = "183--190",
booktitle = "Materials Processing and Energy Materials",
address = "United States",
}