Influence of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Sudhakar Shet, Heli Wang, Nuggehalli Ravindra, Yanfa Yan, John Turner, Mowafak Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation in ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.

Original languageEnglish (US)
Title of host publicationMaterials Processing and Energy Materials
PublisherMinerals, Metals and Materials Society
Pages183-190
Number of pages8
ISBN (Print)9781118029459
DOIs
StatePublished - Jan 1 2011

Publication series

NameTMS Annual Meeting
Volume1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Keywords

  • Bandgap
  • Co-doping
  • Crystallinity
  • Gas ambient
  • N concentration
  • Photoelectrochemical
  • RF power
  • Sputter
  • Substrate temperature
  • ZnO

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