Abstract
The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.
Original language | English (US) |
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Pages (from-to) | 1134-1139 |
Number of pages | 6 |
Journal | ACS Applied Materials and Interfaces |
Volume | 3 |
Issue number | 4 |
DOIs | |
State | Published - Apr 27 2011 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Materials Science
Keywords
- Raman spectroscopy
- chemical and laser etchings
- cobalt diffusion
- diamond
- residual stress
- substrate pretreatment