In(Ga)N nanowire heterostructures and optoelectronic device applications

Saeed Fathololoumi, Hieu P.T. Nguyen, Zetian Mi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Significant developments have been made in III-nitride compound semiconductor nanowire heterostructures. This paper provides an overview on the recent progress of III-nitride nanowire heterostructures and their emerging device applications. The growth mechanisms of III-nitride nanowires are first described, followed by a review of the structural, electrical, and optical properties of In(Ga)N nanowires. The use of III-nitride nanowires to realize functional photonic devices, including light emitting diodes, lasers, solar cells, and sensors are also briefly described, with special attention paid to the emerging nanowire LEDs for applications in solid state lighting.

Original languageEnglish (US)
Pages (from-to)123-139
Number of pages17
JournalNanoscience and Nanotechnology - Asia
Volume1
Issue number2
DOIs
StatePublished - Dec 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Keywords

  • III-nitride nanowires
  • Light emitting diodes
  • Nanotechnology
  • Nanowire growth
  • Optoelectronics
  • Solid state lighting

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