InGaN/GaN dot-in-a-wire: Ultimate terahertz nanostructure

Guan Sun, Ruolin Chen, Yujie J. Ding, Hieu Nguyen, Zetian Mi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The terahertz (THz) radiation from InGaN/GaN dot-in-a-wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three-dimensional quantum-confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light-emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.

Original languageEnglish (US)
Pages (from-to)105-113
Number of pages9
JournalLaser and Photonics Reviews
Volume9
Issue number1
DOIs
StatePublished - Jan 1 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'InGaN/GaN dot-in-a-wire: Ultimate terahertz nanostructure'. Together they form a unique fingerprint.

Cite this