TY - JOUR
T1 - InN p-i-n nanowire solar cells on Si
AU - Nguyen, Hieu Pham Trung
AU - Chang, Yi Lu
AU - Shih, Ishiang
AU - Mi, Zetian
N1 - Funding Information:
Manuscript received July 13, 2010; revised August 10, 2010; accepted August 10, 2010. Date of publication November 11, 2010; date of current version August 5, 2011. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada and in part by the Hydro-Quebec Nano-Engineering Scholar Program at McGill University.
PY - 2011/7
Y1 - 2011/7
N2 - In this paper, we report the first experimental demonstration of InN nanowire solar cells. By employing an in situ deposited In seeding layer, we have achieved electronically pure, nearly intrinsic InN nanowires directly on Si(111) substrates by molecular beam epitaxy. The growth and characterization of Si-and Mg-doped InN nanowires is also investigated, which can exhibit superior structural and optical properties. We have further studied the epitaxial growth, fabrication, and characterization of InN:Si/i-InN and InN:Mg/i-InN/InN:Si axial nanowire structures on p-type and n-type Si(111) substrates, respectively. With the use of a CdS surface passivation, InN:Mg/i-InN/InN:Si nanowire homojunction solar cells exhibit a promising short-circuit current density of 14.4 mA/cm2 and power-conversion efficiency of 0.68 under simulated one-sun (AM 1.5G) illumination. This work suggests the first successful demonstration of p-type doping in InN nanowires and also constitutes important progress for the development of InGaN-based, full-solar-spectrum photovoltaics.
AB - In this paper, we report the first experimental demonstration of InN nanowire solar cells. By employing an in situ deposited In seeding layer, we have achieved electronically pure, nearly intrinsic InN nanowires directly on Si(111) substrates by molecular beam epitaxy. The growth and characterization of Si-and Mg-doped InN nanowires is also investigated, which can exhibit superior structural and optical properties. We have further studied the epitaxial growth, fabrication, and characterization of InN:Si/i-InN and InN:Mg/i-InN/InN:Si axial nanowire structures on p-type and n-type Si(111) substrates, respectively. With the use of a CdS surface passivation, InN:Mg/i-InN/InN:Si nanowire homojunction solar cells exhibit a promising short-circuit current density of 14.4 mA/cm2 and power-conversion efficiency of 0.68 under simulated one-sun (AM 1.5G) illumination. This work suggests the first successful demonstration of p-type doping in InN nanowires and also constitutes important progress for the development of InGaN-based, full-solar-spectrum photovoltaics.
KW - Nanotechnology
KW - optoelectronic devices
KW - p-i-n diodes
KW - solar cells
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U2 - 10.1109/JSTQE.2010.2082505
DO - 10.1109/JSTQE.2010.2082505
M3 - Article
AN - SCOPUS:80051684306
SN - 1077-260X
VL - 17
SP - 1062
EP - 1069
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 4
M1 - 5634053
ER -