InN p-i-n nanowire solar cells on Si

Hieu Pham Trung Nguyen; Yi Lu Chang; Ishiang Shih; Zetian Mi

doi:10.1109/JSTQE.2010.2082505

InN p-i-n nanowire solar cells on Si

Hieu Pham Trung Nguyen
, Yi Lu Chang
, Ishiang Shih
, Zetian Mi

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

In this paper, we report the first experimental demonstration of InN nanowire solar cells. By employing an in situ deposited In seeding layer, we have achieved electronically pure, nearly intrinsic InN nanowires directly on Si(111) substrates by molecular beam epitaxy. The growth and characterization of Si-and Mg-doped InN nanowires is also investigated, which can exhibit superior structural and optical properties. We have further studied the epitaxial growth, fabrication, and characterization of InN:Si/i-InN and InN:Mg/i-InN/InN:Si axial nanowire structures on p-type and n-type Si(111) substrates, respectively. With the use of a CdS surface passivation, InN:Mg/i-InN/InN:Si nanowire homojunction solar cells exhibit a promising short-circuit current density of 14.4 mA/cm² and power-conversion efficiency of 0.68 under simulated one-sun (AM 1.5G) illumination. This work suggests the first successful demonstration of p-type doping in InN nanowires and also constitutes important progress for the development of InGaN-based, full-solar-spectrum photovoltaics.

Original language	English (US)
Article number	5634053
Pages (from-to)	1062-1069
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2082505
State	Published - Jul 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Keywords

Nanotechnology
optoelectronic devices
p-i-n diodes
solar cells

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10.1109/JSTQE.2010.2082505

Cite this

@article{26c8f5049a5248e4871fb88c3339a0f9,

title = "InN p-i-n nanowire solar cells on Si",

abstract = "In this paper, we report the first experimental demonstration of InN nanowire solar cells. By employing an in situ deposited In seeding layer, we have achieved electronically pure, nearly intrinsic InN nanowires directly on Si(111) substrates by molecular beam epitaxy. The growth and characterization of Si-and Mg-doped InN nanowires is also investigated, which can exhibit superior structural and optical properties. We have further studied the epitaxial growth, fabrication, and characterization of InN:Si/i-InN and InN:Mg/i-InN/InN:Si axial nanowire structures on p-type and n-type Si(111) substrates, respectively. With the use of a CdS surface passivation, InN:Mg/i-InN/InN:Si nanowire homojunction solar cells exhibit a promising short-circuit current density of 14.4 mA/cm2 and power-conversion efficiency of 0.68 under simulated one-sun (AM 1.5G) illumination. This work suggests the first successful demonstration of p-type doping in InN nanowires and also constitutes important progress for the development of InGaN-based, full-solar-spectrum photovoltaics.",

keywords = "Nanotechnology, optoelectronic devices, p-i-n diodes, solar cells",

author = "Nguyen, \{Hieu Pham Trung\} and Chang, \{Yi Lu\} and Ishiang Shih and Zetian Mi",

note = "Funding Information: Manuscript received July 13, 2010; revised August 10, 2010; accepted August 10, 2010. Date of publication November 11, 2010; date of current version August 5, 2011. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada and in part by the Hydro-Quebec Nano-Engineering Scholar Program at McGill University.",

year = "2011",

month = jul,

doi = "10.1109/JSTQE.2010.2082505",

language = "English (US)",

volume = "17",

pages = "1062--1069",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - InN p-i-n nanowire solar cells on Si

AU - Nguyen, Hieu Pham Trung

AU - Chang, Yi Lu

AU - Shih, Ishiang

AU - Mi, Zetian

N1 - Funding Information: Manuscript received July 13, 2010; revised August 10, 2010; accepted August 10, 2010. Date of publication November 11, 2010; date of current version August 5, 2011. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada and in part by the Hydro-Quebec Nano-Engineering Scholar Program at McGill University.

PY - 2011/7

Y1 - 2011/7

N2 - In this paper, we report the first experimental demonstration of InN nanowire solar cells. By employing an in situ deposited In seeding layer, we have achieved electronically pure, nearly intrinsic InN nanowires directly on Si(111) substrates by molecular beam epitaxy. The growth and characterization of Si-and Mg-doped InN nanowires is also investigated, which can exhibit superior structural and optical properties. We have further studied the epitaxial growth, fabrication, and characterization of InN:Si/i-InN and InN:Mg/i-InN/InN:Si axial nanowire structures on p-type and n-type Si(111) substrates, respectively. With the use of a CdS surface passivation, InN:Mg/i-InN/InN:Si nanowire homojunction solar cells exhibit a promising short-circuit current density of 14.4 mA/cm2 and power-conversion efficiency of 0.68 under simulated one-sun (AM 1.5G) illumination. This work suggests the first successful demonstration of p-type doping in InN nanowires and also constitutes important progress for the development of InGaN-based, full-solar-spectrum photovoltaics.

AB - In this paper, we report the first experimental demonstration of InN nanowire solar cells. By employing an in situ deposited In seeding layer, we have achieved electronically pure, nearly intrinsic InN nanowires directly on Si(111) substrates by molecular beam epitaxy. The growth and characterization of Si-and Mg-doped InN nanowires is also investigated, which can exhibit superior structural and optical properties. We have further studied the epitaxial growth, fabrication, and characterization of InN:Si/i-InN and InN:Mg/i-InN/InN:Si axial nanowire structures on p-type and n-type Si(111) substrates, respectively. With the use of a CdS surface passivation, InN:Mg/i-InN/InN:Si nanowire homojunction solar cells exhibit a promising short-circuit current density of 14.4 mA/cm2 and power-conversion efficiency of 0.68 under simulated one-sun (AM 1.5G) illumination. This work suggests the first successful demonstration of p-type doping in InN nanowires and also constitutes important progress for the development of InGaN-based, full-solar-spectrum photovoltaics.

KW - Nanotechnology

KW - optoelectronic devices

KW - p-i-n diodes

KW - solar cells

UR - https://www.scopus.com/pages/publications/80051684306

UR - https://www.scopus.com/pages/publications/80051684306#tab=citedBy

U2 - 10.1109/JSTQE.2010.2082505

DO - 10.1109/JSTQE.2010.2082505

M3 - Article

AN - SCOPUS:80051684306

SN - 1077-260X

VL - 17

SP - 1062

EP - 1069

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

M1 - 5634053

ER -

InN p-i-n nanowire solar cells on Si

Abstract

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