InP-based HBT circuits for lightwave and millimeterwave applications

Yves Baeyens; R. Pullela; J. P. Mattia; R. F. Kopf; H. S. Tsai; G. Georgiou; R. A. Hamm; Y. C. Wang; Y. K. Chen

InP-based HBT circuits for lightwave and millimeterwave applications

Yves Baeyens, R. Pullela, J. P. Mattia, R. F. Kopf, H. S. Tsai, G. Georgiou, R. A. Hamm, Y. C. Wang, Y. K. Chen

Research output: Contribution to conference › Paper › peer-review

Abstract

In this study, an attempt was made to demonstrate the capabilities of InP-based heterojunction bipolar transistors (HBTs) by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave techniques. These circuits were realized in the InP based technology, as well as in an all-optical lithography single-heterojunction AlInAs/InGaAs HBT (SHBT) foundry process.

Original language	English (US)
Pages	99-102
Number of pages	4
State	Published - 1999
Externally published	Yes
Event	7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK Duration: Nov 22 1999 → Nov 23 1999

Other

Other	7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)
City	London, UK
Period	11/22/99 → 11/23/99

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "InP-based HBT circuits for lightwave and millimeterwave applications",

abstract = "In this study, an attempt was made to demonstrate the capabilities of InP-based heterojunction bipolar transistors (HBTs) by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave techniques. These circuits were realized in the InP based technology, as well as in an all-optical lithography single-heterojunction AlInAs/InGaAs HBT (SHBT) foundry process.",

author = "Yves Baeyens and R. Pullela and Mattia, {J. P.} and Kopf, {R. F.} and Tsai, {H. S.} and G. Georgiou and Hamm, {R. A.} and Wang, {Y. C.} and Chen, {Y. K.}",

year = "1999",

language = "English (US)",

pages = "99--102",

note = "7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) ; Conference date: 22-11-1999 Through 23-11-1999",

}

TY - CONF

T1 - InP-based HBT circuits for lightwave and millimeterwave applications

AU - Baeyens, Yves

AU - Pullela, R.

AU - Mattia, J. P.

AU - Kopf, R. F.

AU - Tsai, H. S.

AU - Georgiou, G.

AU - Hamm, R. A.

AU - Wang, Y. C.

AU - Chen, Y. K.

PY - 1999

Y1 - 1999

N2 - In this study, an attempt was made to demonstrate the capabilities of InP-based heterojunction bipolar transistors (HBTs) by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave techniques. These circuits were realized in the InP based technology, as well as in an all-optical lithography single-heterojunction AlInAs/InGaAs HBT (SHBT) foundry process.

AB - In this study, an attempt was made to demonstrate the capabilities of InP-based heterojunction bipolar transistors (HBTs) by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave techniques. These circuits were realized in the InP based technology, as well as in an all-optical lithography single-heterojunction AlInAs/InGaAs HBT (SHBT) foundry process.

UR - http://www.scopus.com/inward/record.url?scp=0033344680&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033344680&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033344680

SP - 99

EP - 102

T2 - 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)

Y2 - 22 November 1999 through 23 November 1999

ER -

InP-based HBT circuits for lightwave and millimeterwave applications

Abstract

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All Science Journal Classification (ASJC) codes

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