InP-based HBT circuits for lightwave and millimeterwave applications

Yves Baeyens, R. Pullela, J. P. Mattia, R. F. Kopf, H. S. Tsai, George Georgiou, R. A. Hamm, Y. C. Wang, Y. K. Chen

Research output: Contribution to conferencePaperpeer-review

Abstract

In this study, an attempt was made to demonstrate the capabilities of InP-based heterojunction bipolar transistors (HBTs) by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave techniques. These circuits were realized in the InP based technology, as well as in an all-optical lithography single-heterojunction AlInAs/InGaAs HBT (SHBT) foundry process.

Original languageEnglish (US)
Pages99-102
Number of pages4
StatePublished - Dec 1 1999
Externally publishedYes
Event7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK
Duration: Nov 22 1999Nov 23 1999

Other

Other7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)
CityLondon, UK
Period11/22/9911/23/99

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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