Abstract
In this study, an attempt was made to demonstrate the capabilities of InP-based heterojunction bipolar transistors (HBTs) by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave techniques. These circuits were realized in the InP based technology, as well as in an all-optical lithography single-heterojunction AlInAs/InGaAs HBT (SHBT) foundry process.
| Original language | English (US) |
|---|---|
| Pages | 99-102 |
| Number of pages | 4 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK Duration: Nov 22 1999 → Nov 23 1999 |
Other
| Other | 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) |
|---|---|
| City | London, UK |
| Period | 11/22/99 → 11/23/99 |
All Science Journal Classification (ASJC) codes
- General Engineering