InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Y. Baeyens; G. Georgiou; J. Weiner; V. Houtsma; P. Paschke; Q. Lee; A. Leven; R. Kopf; J. Frackoviak; C. Chen; C. T. Liu; Y. K. Chen

InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Y. Baeyens, G. Georgiou, J. Weiner, V. Houtsma, P. Paschke, Q. Lee, A. Leven, R. Kopf, J. Frackoviak, C. Chen, C. T. Liu, Y. K. Chen

Research output: Contribution to conference › Paper › peer-review

13 Scopus citations

Abstract

The combination of device speed (f_T, f_max>150 GHz) and breakdown voltage (V_bceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

Original language	English (US)
Pages	125-128
Number of pages	4
State	Published - 2001
Externally published	Yes
Event	23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States Duration: Oct 21 2001 → Oct 24 2001

Other

Other	23rd Annual GaAs IC Symposium 2001
Country/Territory	United States
City	Baltimore, MD
Period	10/21/01 → 10/24/01

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers",

abstract = "The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.",

author = "Y. Baeyens and G. Georgiou and J. Weiner and V. Houtsma and P. Paschke and Q. Lee and A. Leven and R. Kopf and J. Frackoviak and C. Chen and Liu, {C. T.} and Chen, {Y. K.}",

year = "2001",

language = "English (US)",

pages = "125--128",

note = "23rd Annual GaAs IC Symposium 2001 ; Conference date: 21-10-2001 Through 24-10-2001",

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TY - CONF

T1 - InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

AU - Baeyens, Y.

AU - Georgiou, G.

AU - Weiner, J.

AU - Houtsma, V.

AU - Paschke, P.

AU - Lee, Q.

AU - Leven, A.

AU - Kopf, R.

AU - Frackoviak, J.

AU - Chen, C.

AU - Liu, C. T.

AU - Chen, Y. K.

PY - 2001

Y1 - 2001

N2 - The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

AB - The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

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M3 - Paper

AN - SCOPUS:0035166991

SP - 125

EP - 128

T2 - 23rd Annual GaAs IC Symposium 2001

Y2 - 21 October 2001 through 24 October 2001

ER -

InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Abstract

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All Science Journal Classification (ASJC) codes

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