InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Y. Baeyens, G. Georgiou, J. Weiner, V. Houtsma, P. Paschke, Q. Lee, A. Leven, R. Kopf, J. Frackoviak, C. Chen, C. T. Liu, Y. K. Chen

Research output: Contribution to conferencePaperpeer-review

13 Scopus citations


The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

Original languageEnglish (US)
Number of pages4
StatePublished - 2001
Externally publishedYes
Event23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States
Duration: Oct 21 2001Oct 24 2001


Other23rd Annual GaAs IC Symposium 2001
Country/TerritoryUnited States
CityBaltimore, MD

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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