InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Y. Baeyens; G. Georgiou; J. Weiner; V. Houtsma; P. Paschke; Q. Lee; A. Leven; R. Kopf; J. Frackoviak; C. Chen; C. T. Liu; Y. K. Chen

InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Y. Baeyens
, G. Georgiou
, J. Weiner
, V. Houtsma
, P. Paschke
, Q. Lee
, A. Leven
, R. Kopf
, J. Frackoviak
, C. Chen
, C. T. Liu
, Y. K. Chen

Research output: Contribution to conference › Paper › peer-review

Abstract

The combination of device speed (f_T, f_max>150 GHz) and breakdown voltage (V_bceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

Original language	English (US)
Pages	125-128
Number of pages	4
State	Published - 2001
Externally published	Yes
Event	23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States Duration: Oct 21 2001 → Oct 24 2001

Other

Other	23rd Annual GaAs IC Symposium 2001
Country/Territory	United States
City	Baltimore, MD
Period	10/21/01 → 10/24/01

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@conference{eade154fdd454635b38c55ab5676a366,

title = "InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers",

abstract = "The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.",

author = "Y. Baeyens and G. Georgiou and J. Weiner and V. Houtsma and P. Paschke and Q. Lee and A. Leven and R. Kopf and J. Frackoviak and C. Chen and Liu, \{C. T.\} and Chen, \{Y. K.\}",

year = "2001",

language = "English (US)",

pages = "125--128",

note = "23rd Annual GaAs IC Symposium 2001 ; Conference date: 21-10-2001 Through 24-10-2001",

}

TY - CONF

T1 - InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

AU - Baeyens, Y.

AU - Georgiou, G.

AU - Weiner, J.

AU - Houtsma, V.

AU - Paschke, P.

AU - Lee, Q.

AU - Leven, A.

AU - Kopf, R.

AU - Frackoviak, J.

AU - Chen, C.

AU - Liu, C. T.

AU - Chen, Y. K.

PY - 2001

Y1 - 2001

N2 - The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

AB - The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

UR - https://www.scopus.com/pages/publications/0035166991

UR - https://www.scopus.com/pages/publications/0035166991#tab=citedBy

M3 - Paper

AN - SCOPUS:0035166991

SP - 125

EP - 128

T2 - 23rd Annual GaAs IC Symposium 2001

Y2 - 21 October 2001 through 24 October 2001

ER -

InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Abstract

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All Science Journal Classification (ASJC) codes

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