InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

Yves Baeyens; George Georgiou; Joseph S. Weiner; Andreas Leven; Vincent Houtsma; Peter Paschke; Q. Lee; Rose F. Kopf; Y. Yang; L. Chua; C. Chen; C. T. Liu; Young Kai Chen

doi:10.1109/JSSC.2002.801188

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

Yves Baeyens, George Georgiou, Joseph S. Weiner, Andreas Leven, Vincent Houtsma, Peter Paschke, Q. Lee, Rose F. Kopf, Y. Yang, L. Chua, C. Chen, C. T. Liu, Young Kai Chen

Research output: Contribution to journal › Conference article › peer-review

48 Scopus citations

Abstract

The combination of device speed (f _T, f _max > 150 GHz) and breakdown voltage (V _bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V _pp differential output swing, a distributed 40-Gb/s driver amplifier with 6-V _pp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.

Original language	English (US)
Pages (from-to)	1152-1159
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2002.801188
State	Published - Sep 2002
Externally published	Yes
Event	23rd IEEE GaAs IC Symposium - Baltimore, MD, United States Duration: Oct 21 2001 → Oct 24 2001

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Heterojunction bipolar transistors
High-speed integrated circuits
Indium compounds
Millimeter-wave bipolar transistor amplifiers
Millimeter-wave bipolar transistor oscillators
Optical receivers
Optical transmitters

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10.1109/JSSC.2002.801188

Cite this

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title = "InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers",

abstract = "The combination of device speed (f T, f max > 150 GHz) and breakdown voltage (V bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V pp differential output swing, a distributed 40-Gb/s driver amplifier with 6-V pp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.",

keywords = "Heterojunction bipolar transistors, High-speed integrated circuits, Indium compounds, Millimeter-wave bipolar transistor amplifiers, Millimeter-wave bipolar transistor oscillators, Optical receivers, Optical transmitters",

author = "Yves Baeyens and George Georgiou and Weiner, {Joseph S.} and Andreas Leven and Vincent Houtsma and Peter Paschke and Q. Lee and Kopf, {Rose F.} and Y. Yang and L. Chua and C. Chen and Liu, {C. T.} and Chen, {Young Kai}",

year = "2002",

month = sep,

doi = "10.1109/JSSC.2002.801188",

language = "English (US)",

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pages = "1152--1159",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

note = "23rd IEEE GaAs IC Symposium ; Conference date: 21-10-2001 Through 24-10-2001",

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T1 - InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

AU - Baeyens, Yves

AU - Georgiou, George

AU - Weiner, Joseph S.

AU - Leven, Andreas

AU - Houtsma, Vincent

AU - Paschke, Peter

AU - Lee, Q.

AU - Kopf, Rose F.

AU - Yang, Y.

AU - Chua, L.

AU - Chen, C.

AU - Liu, C. T.

AU - Chen, Young Kai

PY - 2002/9

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N2 - The combination of device speed (f T, f max > 150 GHz) and breakdown voltage (V bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V pp differential output swing, a distributed 40-Gb/s driver amplifier with 6-V pp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.

AB - The combination of device speed (f T, f max > 150 GHz) and breakdown voltage (V bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V pp differential output swing, a distributed 40-Gb/s driver amplifier with 6-V pp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.

KW - Heterojunction bipolar transistors

KW - High-speed integrated circuits

KW - Indium compounds

KW - Millimeter-wave bipolar transistor amplifiers

KW - Millimeter-wave bipolar transistor oscillators

KW - Optical receivers

KW - Optical transmitters

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ER -

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

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