InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

Yves Baeyens, George Georgiou, Joseph S. Weiner, Andreas Leven, Vincent Houtsma, Peter Paschke, Q. Lee, Rose F. Kopf, Y. Yang, L. Chua, C. Chen, C. T. Liu, Young Kai Chen

Research output: Contribution to journalConference articlepeer-review

47 Scopus citations

Abstract

The combination of device speed (f T, f max > 150 GHz) and breakdown voltage (V bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V pp differential output swing, a distributed 40-Gb/s driver amplifier with 6-V pp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.

Original languageEnglish (US)
Pages (from-to)1152-1159
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume37
Issue number9
DOIs
StatePublished - Sep 1 2002
Externally publishedYes
Event23rd IEEE GaAs IC Symposium - Baltimore, MD, United States
Duration: Oct 21 2001Oct 24 2001

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Heterojunction bipolar transistors
  • High-speed integrated circuits
  • Indium compounds
  • Millimeter-wave bipolar transistor amplifiers
  • Millimeter-wave bipolar transistor oscillators
  • Optical receivers
  • Optical transmitters

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