Abstract
The combination of device speed (f T, f max > 150 GHz) and breakdown voltage (V bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V pp differential output swing, a distributed 40-Gb/s driver amplifier with 6-V pp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1152-1159 |
| Number of pages | 8 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 37 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2002 |
| Externally published | Yes |
| Event | 23rd IEEE GaAs IC Symposium - Baltimore, MD, United States Duration: Oct 21 2001 → Oct 24 2001 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Keywords
- Heterojunction bipolar transistors
- High-speed integrated circuits
- Indium compounds
- Millimeter-wave bipolar transistor amplifiers
- Millimeter-wave bipolar transistor oscillators
- Optical receivers
- Optical transmitters