Integration of multilayers in Er-doped porous silicon structures and advances in 1.5 um optoelectronic devices

H. A. Lopez, S. Chan, L. Tsybeskov, H. Koyama, V. P. Bondarenko, P. M. Fauchet

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Infrared photoluminescence (PL) and electroluminescence (EL) from erbium-doped porous silicon (PSi) structures are studied. The PL and EL from the Er-doped PSi structures and the absence of silicon band edge recombination, point defect, and dislocation luminescence bands suggest that the Er-complex centers are the most efficient recombination sites. PSi multilayers with very high reflectivity (R > 90%) in the 1.5 (im range have been incorporated in the structures resulting in a PL enhancement of over 100%. Stable and intense EL is obtained from the Er-doped structures. The EL spectrum is similar to that of the PL, but shifted towards higher energy. The unexpected shift in emission opens up the possibility for erbium related luminescence to encompass a larger part of the optimal wavelength window for fiber optic communications. °1999 Materials Research Society.

Original languageEnglish (US)
Pages (from-to)135-140
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume536
StatePublished - 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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