Integration of silicon electroluminescent devices with silicon microelectronics

K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, P. M. Fauchet

Research output: Contribution to journalConference articlepeer-review

Abstract

A silicon-rich silicon oxide (SRSO)-based light emitting diode (LED) is integrated with a surrounding bipolar driver transistor using a standard bipolar process which was modified to include five additional lithography levels and several processing steps. The driver transistor is connected in a common-emitter configuration and modulates light emission by amplifying a small base input signal and controlling current flow through the LED. The circular design is area-efficient and scalable, provides effective electrical isolation and demonstrates a truly integrated structure.

Original languageEnglish (US)
Pages (from-to)452-453
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume11
StatePublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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