Integration of silicon electroluminescent devices with silicon microelectronics

K. D. Hirschman; L. Tsybeskov; S. P. Duttagupta; P. M. Fauchet

Integration of silicon electroluminescent devices with silicon microelectronics

K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, P. M. Fauchet

Research output: Contribution to journal › Conference article › peer-review

Abstract

A silicon-rich silicon oxide (SRSO)-based light emitting diode (LED) is integrated with a surrounding bipolar driver transistor using a standard bipolar process which was modified to include five additional lithography levels and several processing steps. The driver transistor is connected in a common-emitter configuration and modulates light emission by amplifying a small base input signal and controlling current flow through the LED. The circular design is area-efficient and scalable, provides effective electrical isolation and demonstrates a truly integrated structure.

Original language	English (US)
Pages (from-to)	452-453
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	11
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: May 18 1997 → May 23 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{fe64a45151674bddae05906a182256ac,

title = "Integration of silicon electroluminescent devices with silicon microelectronics",

abstract = "A silicon-rich silicon oxide (SRSO)-based light emitting diode (LED) is integrated with a surrounding bipolar driver transistor using a standard bipolar process which was modified to include five additional lithography levels and several processing steps. The driver transistor is connected in a common-emitter configuration and modulates light emission by amplifying a small base input signal and controlling current flow through the LED. The circular design is area-efficient and scalable, provides effective electrical isolation and demonstrates a truly integrated structure.",

author = "Hirschman, {K. D.} and L. Tsybeskov and Duttagupta, {S. P.} and Fauchet, {P. M.}",

year = "1997",

language = "English (US)",

volume = "11",

pages = "452--453",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 18-05-1997 Through 23-05-1997",

}

TY - JOUR

T1 - Integration of silicon electroluminescent devices with silicon microelectronics

AU - Hirschman, K. D.

AU - Tsybeskov, L.

AU - Duttagupta, S. P.

AU - Fauchet, P. M.

PY - 1997

Y1 - 1997

N2 - A silicon-rich silicon oxide (SRSO)-based light emitting diode (LED) is integrated with a surrounding bipolar driver transistor using a standard bipolar process which was modified to include five additional lithography levels and several processing steps. The driver transistor is connected in a common-emitter configuration and modulates light emission by amplifying a small base input signal and controlling current flow through the LED. The circular design is area-efficient and scalable, provides effective electrical isolation and demonstrates a truly integrated structure.

AB - A silicon-rich silicon oxide (SRSO)-based light emitting diode (LED) is integrated with a surrounding bipolar driver transistor using a standard bipolar process which was modified to include five additional lithography levels and several processing steps. The driver transistor is connected in a common-emitter configuration and modulates light emission by amplifying a small base input signal and controlling current flow through the LED. The circular design is area-efficient and scalable, provides effective electrical isolation and demonstrates a truly integrated structure.

UR - http://www.scopus.com/inward/record.url?scp=0030671872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030671872&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030671872

SN - 1092-8081

VL - 11

SP - 452

EP - 453

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO

Y2 - 18 May 1997 through 23 May 1997

ER -

Integration of silicon electroluminescent devices with silicon microelectronics

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this