Interface characterization of high-k dielectrics on Ge substrates

Keyphrases

• Annealing 40%
• C-V Measurement 20%
• Conductance Measurement 20%
• Density Interface 20%
• Dielectric 20%
• Electrical Characterization 20%
• Flat-band Voltage 20%
• Gate Dielectric 20%
• Ge Substrate 100%
• GeO2 20%
• Germanium Substrate 20%
• HfO2 100%
• High Mobility 20%
• High-k Dielectric 100%
• High-Tc Films 20%
• Hysteresis 20%
• Hysteresis Current 20%
• Interface Characterization 100%
• Interface Quality 20%
• Interface State Density 40%
• Interface Traps 20%
• Interface Treatment 20%
• Interfacial Layer 20%
• Inverted Region 20%
• Leakage Current 20%
• Leakage Current Density 20%
• Mobility Loss 20%
• MOS Capacitor 20%
• Nitrides 40%
• RF Source 20%
• Silica 40%
• Surface Nitridation 20%
• XPS Analysis 20%

Engineering

• Dielectrics 100%
• Gate Dielectric 33%
• Ge Interface 66%
• Ge Substrate 100%
• Interface State 66%
• Interface Trap 33%
• Interfacial Layer 33%
• Monolayer 33%

Material Science

• Capacitor 25%
• Density 100%
• Dielectric Material 100%
• Film 25%
• Germanium 25%
• Monolayers 25%
• Nitriding 25%
• Silicon 50%