TY - GEN
T1 - Interface engineering of high-K and high-mobility substrate interface
AU - Misra, Durga
PY - 2012
Y1 - 2012
N2 - To attend the current trend in device scaling for sub-22 nm CMOS technology and beyond high mobility channel materials with high-k dielectrics are being integrated. Substrates like Ge and GaAs are being considered for their high electron mobility. The interface between the high-k dielectrics and the high mobility substrates are currently being engineered. Strong interface passivation techniques are being considered to optimize the device performance and reliability. Electrical performance in these devices depends on the deposition process, precise selection of deposition parameters, predeposition surface treatments and subsequent annealing temperatures. This work reviews the recent developments of high-k/Ge interface and its characterization. To form an electrically passive interface, interface treatments such as surface nitridation of HfO2/Ge interface are evaluated. In addition, electrical characteristics of high-k on III-V substrates are also outlined.
AB - To attend the current trend in device scaling for sub-22 nm CMOS technology and beyond high mobility channel materials with high-k dielectrics are being integrated. Substrates like Ge and GaAs are being considered for their high electron mobility. The interface between the high-k dielectrics and the high mobility substrates are currently being engineered. Strong interface passivation techniques are being considered to optimize the device performance and reliability. Electrical performance in these devices depends on the deposition process, precise selection of deposition parameters, predeposition surface treatments and subsequent annealing temperatures. This work reviews the recent developments of high-k/Ge interface and its characterization. To form an electrically passive interface, interface treatments such as surface nitridation of HfO2/Ge interface are evaluated. In addition, electrical characteristics of high-k on III-V substrates are also outlined.
UR - http://www.scopus.com/inward/record.url?scp=84874874908&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874874908&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2012.6467943
DO - 10.1109/ICSICT.2012.6467943
M3 - Conference contribution
AN - SCOPUS:84874874908
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Y2 - 29 October 2012 through 1 November 2012
ER -