Abstract
To attend the current trend in device scaling for sub-22 nm CMOS technology and beyond high mobility channel materials with high-k dielectrics are being integrated. Substrates like Ge and GaAs are being considered for their high electron mobility. The interface between the high-k dielectrics and the high mobility substrates are currently being engineered. Strong interface passivation techniques are being considered to optimize the device performance and reliability. Electrical performance in these devices depends on the deposition process, precise selection of deposition parameters, predeposition surface treatments and subsequent annealing temperatures. This work reviews the recent developments of high-k/Ge interface and its characterization. To form an electrically passive interface, interface treatments such as surface nitridation of HfO2/Ge interface are evaluated. In addition, electrical characteristics of high-k on III-V substrates are also outlined.
| Original language | English (US) |
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| Title of host publication | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings |
| DOIs | |
| State | Published - Dec 1 2012 |
| Event | 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: Oct 29 2012 → Nov 1 2012 |
Other
| Other | 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 |
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| Country/Territory | China |
| City | Xi'an |
| Period | 10/29/12 → 11/1/12 |
All Science Journal Classification (ASJC) codes
- Human-Computer Interaction
- Electrical and Electronic Engineering