Interface engineering of high-K and high-mobility substrate interface

Keyphrases

• High-k Dielectric 100%
• High Mobility Substrates 100%
• Substrate Interface 100%
• Interface Engineering 100%
• Device Performance 50%
• CMOS Technology 50%
• Electrical Characteristics 50%
• HfO2 50%
• Device Scaling 50%
• Gallium Arsenide 50%
• Deposition Parameters 50%
• Annealing Temperature 50%
• Deposition Process 50%
• Subsequent Annealing 50%
• Passivation Effect 50%
• Channel Material 50%
• Pre-deposition 50%
• Surface Treatment 50%
• Interface Passivation 50%
• High Electron Mobility 50%
• Device Reliability 50%
• Electrical Performance 50%
• Surface Nitridation 50%
• Interface Treatment 50%
• High-mobility Channel 50%
• Strong Interface 50%
• III-V Substrates 50%

Engineering

• Engineering 100%
• Dielectrics 100%
• Substrate Interface 100%
• Ge Interface 100%
• Device Performance 50%
• Passivation 50%
• Device Scaling 50%
• Gallium Arsenide 50%
• Annealing Temperature 50%
• Deposition Parameter 50%
• Deposition Process 50%
• Electrical Performance 50%
• High Mobility Channel Material 50%

Material Science

• Dielectric Material 100%
• Annealing 50%
• Electron Mobility 50%
• Gallium Arsenide 50%
• Electrical Property 50%
• Nitriding 50%