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Interface hardening with deuterium implantation
D. Misra
, R. K. Jarwal
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
11
Scopus citations
Overview
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Engineering & Materials Science
Deuterium
100%
Hardening
64%
Oxides
42%
Dangling bonds
36%
Silicon
31%
Electron traps
18%
Semiconductor diodes
16%
Interface states
15%
Substrates
14%
Ion implantation
13%
Dosimetry
12%
Oxide semiconductors
11%
Electric current measurement
11%
Polysilicon
11%
Energy gap
11%
Leakage currents
10%
Oxidation
8%
Metals
6%
Chemical Compounds
Deuterium(.)
63%
Oxide
37%
Implant
27%
Interface Trap
23%
Interface State
21%
Energy
19%
Electron Trap
19%
Dangling Bond
18%
Leakage Current
18%
Ion Implantation
16%
Conductance
13%
Reduction
12%
Polycrystalline Solid
12%
Dose
10%
Band Gap
10%
Oxidation Reaction
6%