Interface passivation by deuterium for nanoscale CMOS devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Passivation of interfaces such as Si/SiO 2 and Si/HfO 2 (Si/high-k) by deuterium instead of hydrogen is getting significant attention for scaled CMOS devices. This paper introduces the various methods of deuterium incorporation at the interface including thermal annealing and deuterium implantation at the Si/SiO 2 interface when a thin oxide is grown on implanted silicon substrate. In case of annealing thermal budget is a limiting factor whereas for implantation, energy and implantation dose significantly influence the interface passivation. Interface passivation by hydrogen and deuterium implantation is discussed. Observed interface states at the Si/SiO 2 interface suggests an isotope effect where deuterium implanted devices yielded better interface results compared to that of hydrogen implanted devices. Transient enhanced diffusion of implanted hydrogen and deuterium is affected by the implantation damage.

Original languageEnglish (US)
Title of host publication2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
EditorsR. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys
Pages792-797
Number of pages6
Volume2
StatePublished - Dec 1 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period10/18/0410/21/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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