Interface state density engineering in Hf_1-xZr_xO₂/SiON/Si gate stack

Keyphrases

• Gate Stack 100%
• Interface State Density 100%
• CexZr1-xO2 100%
• Silicon Oxynitride (SiON) 100%
• Dadaism 80%
• Nitridation 60%
• Antenna 40%
• Dielectric 40%
• Atomic Layer Deposition 40%
• Silica 40%
• Plasma Exposure 40%
• Cyclic Deposition 40%
• Oxynitride 40%
• Downscaling 20%
• HfO2 20%
• Processing Conditions 20%
• Grain Boundary 20%
• Interfacial Layer 20%
• Zirconium Dioxide 20%
• Constant Voltage Stress 20%
• Trap-assisted Tunneling 20%
• Ar Plasma 20%
• Midgap 20%
• Interface Generation 20%
• Electron Affinity 20%
• Equivalent Oxide Thickness 20%
• Conductance Method 20%
• Charged Grains 20%
• Interface Characteristics 20%
• Nitrogen Incorporation 20%
• Cyclic Treatment 20%
• Cyclic Annealing 20%

Material Science

• Density 100%
• Nitriding 100%
• Dielectric Material 66%
• Oxynitride 66%
• Oxide Compound 33%
• Zirconia 33%
• Annealing 33%
• Grain Boundary 33%
• Hafnium Ion 33%
• Zirconium Ion 33%