Interface states reduction in atomic layer deposited TiN/ZrO₂/Al₂O₃/Ge gate stacks

Engineering & Materials Science

• Interface states 98%
• Aluminum oxide 61%
• Plasmas 59%
• Oxidation 50%
• Antennas 36%
• X ray photoelectron spectroscopy 26%
• Electric properties 15%
• Atomic layer deposition 10%
• Oxide semiconductors 8%
• Densification 8%
• Electric breakdown 8%
• Leakage currents 7%
• Current density 6%
• Hysteresis 6%
• Oxides 6%
• Capacitors 5%
• Metals 4%

Physics & Astronomy

• plasma antennas 100%
• slots 65%
• oxidation 47%
• photoelectron spectroscopy 19%
• breakdown 12%
• electrical properties 11%
• x rays 10%
• atomic layer epitaxy 8%
• metal oxide semiconductors 8%
• densification 7%
• capacitors 6%
• leakage 6%
• hysteresis 6%
• current density 5%
• oxides 4%

Chemical Compounds

• Interface State 98%
• Plasma 39%
• Reduction 29%
• Oxidation Reaction 22%
• X-Ray Photoelectron Spectroscopy 14%
• Dielectric Material 12%
• Electrical Property 11%
• Leakage Current 9%
• Atomic Layer Epitaxy 8%
• Densification 7%
• Capacitor 7%
• Hysteresis 7%
• Current Density 5%
• Oxide 3%
• Application 2%