@inproceedings{afe3585c025746a4a080d8a1f8ec474d,
title = "Interface treatment related defects during germanium gate stack formation",
abstract = "The impact of different interface treatments on defect generation during gate stack formation on the p-type germanium is reported in this paper. In most cases 1nm Al2O3 was used to limit the germanium diffusion into the high-k layer. Defects were characterized by conductance method and deep level transient spectroscopy. A signature of slow traps (~1ms) originating from the bulk or interface depending on the type of GeOx formation was observed. Furthermore, the defect formation due to different types interfacial layer formation is also investigated when the gate stacks were subjected to slot plane antenna plasma oxidation. It was observed that a stable GeOx formation leads to a reduction in defect formation at the interface.",
author = "D. Misra",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 ; Conference date: 30-05-2021 Through 03-06-2021",
year = "2021",
doi = "10.1149/10204.0073ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "4",
pages = "73--80",
editor = "E. Simoen and O. Kononchuk and O. Nakatsuka and C. Claeys",
booktitle = "239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16",
address = "United Kingdom",
edition = "4",
}