Interface treatment related defects during germanium gate stack formation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The impact of different interface treatments on defect generation during gate stack formation on the p-type germanium is reported in this paper. In most cases 1nm Al2O3 was used to limit the germanium diffusion into the high-k layer. Defects were characterized by conductance method and deep level transient spectroscopy. A signature of slow traps (~1ms) originating from the bulk or interface depending on the type of GeOx formation was observed. Furthermore, the defect formation due to different types interfacial layer formation is also investigated when the gate stacks were subjected to slot plane antenna plasma oxidation. It was observed that a stable GeOx formation leads to a reduction in defect formation at the interface.

Original languageEnglish (US)
Title of host publication239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16
EditorsE. Simoen, O. Kononchuk, O. Nakatsuka, C. Claeys
PublisherIOP Publishing Ltd.
Pages73-80
Number of pages8
Edition4
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2021
Event239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Chicago, United States
Duration: May 30 2021Jun 3 2021

Publication series

NameECS Transactions
Number4
Volume102
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021
Country/TerritoryUnited States
CityChicago
Period5/30/216/3/21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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