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Interface treatment related defects during germanium gate stack formation
D. Misra
Electrical and Computer Engineering
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Keyphrases
Germanium
100%
Gate Stack
100%
Interface Treatment
100%
Treatment-related
100%
GeOx
66%
Defect Formation
66%
Antenna
33%
Aluminum Oxide
33%
Interfacial Layer
33%
Plasma Oxidation
33%
Layer Formation
33%
Defect Generation
33%
Conductance Method
33%
Slow Traps
33%
Deep Level Transient Spectroscopy
33%
Physics
Antenna
100%
Conductance
100%
Material Science
Germanium
100%
Aluminum Oxide
33%
Deep-Level Transient Spectroscopy
33%
Antenna
33%