Interfacial layer growth condition dependent carrier transport mechanisms in HfO 2/SiO 2 gate stacks

S. K. Sahoo; D. Misra

doi:10.1063/1.4726186

Interfacial layer growth condition dependent carrier transport mechanisms in HfO ₂/SiO ₂ gate stacks

S. K. Sahoo, D. Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The temperature and field dependent leakage current in HfO ₂/SiO ₂ gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (φ _t) and activation energy (E _a) increase for chemically grown IL devices. The trap level energy, (φ _t) ∼ 0.2 eV, indicates that doubly charged oxygen vacancies (V ^2-) are the active electron traps which contribute to the leakage current in these gate stacks.

Original language	English (US)
Article number	232903
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726186
State	Published - Jun 4 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4726186

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title = "Interfacial layer growth condition dependent carrier transport mechanisms in HfO 2/SiO 2 gate stacks",

abstract = "The temperature and field dependent leakage current in HfO 2/SiO 2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (φ t) and activation energy (E a) increase for chemically grown IL devices. The trap level energy, (φ t) ∼ 0.2 eV, indicates that doubly charged oxygen vacancies (V 2-) are the active electron traps which contribute to the leakage current in these gate stacks.",

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AU - Misra, D.

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N2 - The temperature and field dependent leakage current in HfO 2/SiO 2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (φ t) and activation energy (E a) increase for chemically grown IL devices. The trap level energy, (φ t) ∼ 0.2 eV, indicates that doubly charged oxygen vacancies (V 2-) are the active electron traps which contribute to the leakage current in these gate stacks.

AB - The temperature and field dependent leakage current in HfO 2/SiO 2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (φ t) and activation energy (E a) increase for chemically grown IL devices. The trap level energy, (φ t) ∼ 0.2 eV, indicates that doubly charged oxygen vacancies (V 2-) are the active electron traps which contribute to the leakage current in these gate stacks.

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Interfacial layer growth condition dependent carrier transport mechanisms in HfO ₂/SiO ₂ gate stacks

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