Interfacial layer growth condition dependent carrier transport mechanisms in HfO ₂/SiO ₂ gate stacks

Keyphrases

• Activation Energy 33%
• Active Electron 33%
• Carrier Transport Mechanism 100%
• Condition-dependent 100%
• Electron Traps 33%
• Field Dependence 33%
• Field Regions 33%
• Gate Stack 100%
• Growth Conditions 100%
• HfO2 100%
• High Field 33%
• In Situ 33%
• Interfacial Layer 100%
• Layer Growth 100%
• Leakage Current 100%
• Level Energies 33%
• Low Field 33%
• Ohmic Conduction 33%
• Oxygen Vacancy 33%
• Poole-Frenkel Mechanism 33%
• Silica 100%
• Steam 33%
• Temperature Effect 33%
• Temperature Range 33%
• Trap Energy 33%
• Trap Level 33%

Engineering

• Activation Energy 33%
• Electron Trap 33%
• Field Region 33%
• Gate Stack 100%
• Growth Condition 100%
• Interfacial Layer 100%
• Level Energy 33%
• Ohmic Conduction 33%
• Oxygen Vacancy 33%
• Temperature Range 33%
• Transport Mechanism 100%

Material Science

• Activation Energy 100%
• Carrier Transport 100%
• Oxygen Vacancy 100%