Interfacial layer growth condition dependent electrical conduction in HfO2/SiO2 heterostructured thin films

Santosh K. Sahoo, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO2/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO2) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level (φt) and activation energy (Ea) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level (φt) of ∼ 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V2-) are the active defects and are contributing to the leakage current in these devices.

Original languageEnglish (US)
Title of host publicationFerroelectric and Multiferroic Materials
Number of pages7
StatePublished - 2011
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 3 2011

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2011 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Interfacial layer growth condition dependent electrical conduction in HfO2/SiO2 heterostructured thin films'. Together they form a unique fingerprint.

Cite this