Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

P. Srinivasan, F. Crupi, E. Simoen, P. Magnone, C. Pace, D. Misra, C. Claeys

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The effects of interfacial layer quality on the low-frequency noise behavior of p-channel MOSFETs with high-κ gate dielectric and metal gate are investigated. Devices with chemically grown SiO2 interfacial layers (0.8 nm) are compared with N2O (0.8 nm) interfacial oxides. A 0.4 nm SiO2 interfacial layer device is used for comparison purposes. A cross-over kind of behavior has been observed in N2O devices, which occur at lower gate voltages (∼1.2-1.3 V) when normalized spectral densities and input referred noise are investigated. This behavior is found to be closely related to the observed transconductance variation in these devices. The dominant mechanism of 1/f noise is found to be Hooge's mobility fluctuations. Hooge's parameter, as a figure of merit, shows an increase for 0.4 nm devices when compared to 0.8 nm devices, while 0.8 nm N2O devices confirm their cross-over nature.

Original languageEnglish (US)
Pages (from-to)501-504
Number of pages4
JournalMicroelectronics Reliability
Volume47
Issue number4-5 SPEC. ISS.
DOIs
StatePublished - Apr 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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