Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Chemical Compounds

• Transconductance 100%
• Figure of Merit 74%
• Dielectric Material 57%
• Compound Mobility 49%
• Voltage 47%
• Oxide 35%
• Metal 29%

Physics & Astronomy

• field effect transistors 50%
• low frequencies 45%
• transconductance 10%
• figure of merit 8%
• oxides 5%
• electric potential 5%
• metals 4%

Engineering & Materials Science

• Gate dielectrics 13%
• Spectral density 12%
• Transconductance 11%
• Oxides 7%
• Metals 5%
• Electric potential 4%