Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

P. L. Bonanno; S. M. O'Malley; A. A. Sirenko; A. Kazimirov; Z. H. Cai; T. Wunderer; P. Brückner; F. Scholz

doi:10.1063/1.2901142

Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

P. L. Bonanno, S. M. O'Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, F. Scholz

Physics

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8 Scopus citations

Abstract

Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaNGaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm -wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth.

Original language	English (US)
Article number	123106
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2901142
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2901142

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@article{98b9603e43ba4334874d529e39eda2b7,

title = "Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction",

abstract = "Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaNGaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm -wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth.",

author = "Bonanno, {P. L.} and O'Malley, {S. M.} and Sirenko, {A. A.} and A. Kazimirov and Cai, {Z. H.} and T. Wunderer and P. Br{\"u}ckner and F. Scholz",

note = "Funding Information: Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. . The Cornell High Energy Synchrotron Source was supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under Award . Parts of this work have been supported by the Deutsche Forschungsgemeinschaft. ",

year = "2008",

doi = "10.1063/1.2901142",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

AU - Bonanno, P. L.

AU - O'Malley, S. M.

AU - Sirenko, A. A.

AU - Kazimirov, A.

AU - Cai, Z. H.

AU - Wunderer, T.

AU - Brückner, P.

AU - Scholz, F.

N1 - Funding Information: Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. . The Cornell High Energy Synchrotron Source was supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under Award . Parts of this work have been supported by the Deutsche Forschungsgemeinschaft.

PY - 2008

Y1 - 2008

N2 - Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaNGaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm -wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth.

AB - Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaNGaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm -wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth.

UR - http://www.scopus.com/inward/record.url?scp=41349099159&partnerID=8YFLogxK

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U2 - 10.1063/1.2901142

DO - 10.1063/1.2901142

M3 - Article

AN - SCOPUS:41349099159

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123106

ER -

Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

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