Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

P. L. Bonanno, S. M. O'Malley, A. A. Sirenko, A. Kazimirov, Z. H. Cai, T. Wunderer, P. Brückner, F. Scholz

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Abstract

Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaNGaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm -wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth.

Original languageEnglish (US)
Article number123106
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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