Intrinsic band-edge photoluminescence from silicon clusters at room temperature

L. Tsybeskov, K. Moore, D. Hall

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

We report silicon band-edge photoluminescence (PL) with photon energy of 1.1 eV and external quantum efficiency (EQE) better than (Formula presented) in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

Original languageEnglish (US)
Pages (from-to)R8361-R8364
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number12
DOIs
StatePublished - 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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