Abstract
We report silicon band-edge photoluminescence (PL) with photon energy of 1.1 eV and external quantum efficiency (EQE) better than (Formula presented) in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.
| Original language | English (US) |
|---|---|
| Pages (from-to) | R8361-R8364 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1996 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics