We report silicon band-edge photoluminescence (PL) with photon energy of 1.1 eV and external quantum efficiency (EQE) better than (Formula presented) in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1996|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics