Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications

R. Singh, T. R. Lenka, D. K. Panda, H. P.T. Nguyen

Research output: Contribution to journalArticlepeer-review

Abstract

Here we demonstrate a two-dimensional β-gallium oxide-based high electron mobility transistor (HEMT) comprising of a finite gap - access region gap (LARG) inOhmic-contact access regionswith record transconductance linearity. Apart from limiting two-dimensional electron gas (2-DEG) density ns dependency on gate voltage, higher saturation current is estimated for the proposed design. Since access regions length directly affects the Capacitance of the device and resultant switching applications. In this work, the effect of the gate-source and gate-drain length on device linearity is performed using Atlas-2Dsimulations. C - V characteristics of the proposed device are explained based on the physical explanation and validated using appropriate models. The higher values of transconductance gm and current gain cut-off frequency fT on a large span of operating voltages ensure improved transistors' performance and are reported for the first time.

Original languageEnglish (US)
Article number035042
JournalEngineering Research Express
Volume3
Issue number3
DOIs
StatePublished - Sep 2021

All Science Journal Classification (ASJC) codes

  • General Engineering

Keywords

  • 2DEG
  • AlN/β-GaO
  • HEMT
  • LNA
  • RF

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