Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications

Keyphrases

• Low Noise 100%
• Transconductance 100%
• Ga2O3 100%
• RF Applications 100%
• Access Region 100%
• 2D Simulation 100%
• Noise Amplification 100%
• Two Dimensional 50%
• Gas Density 50%
• Appropriate Model 50%
• Proposed Design 50%
• Oxide-based 50%
• Saturation Current 50%
• Physical Explanation 50%
• Operating Voltage 50%
• Capacitance 50%
• Gate Voltage 50%
• High Saturation 50%
• 2-dimensional Electron Gas (2DEG) 50%
• C-V Characteristics 50%
• Switching Application 50%
• Gallium Oxide 50%
• Finite Gap 50%
• Current Gain Cutoff Frequency 50%
• High Electron Mobility Transistor 50%
• Transistor Performance 50%
• Large Span 50%
• Device Linearity 50%

Engineering

• Two Dimensional 100%
• Access Region 100%
• Operating Voltage 50%
• Current Gain 50%
• Gas Density 50%
• Gate Voltage 50%
• Cutoff Frequency 50%

Material Science

• Transistor 100%
• Capacitance 50%
• Density of Gases 50%
• Oxide Compound 50%
• Electron Mobility 50%
• Gallium 50%