Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT

R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q.T. Bui, H. P.T. Nguyen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, drain current transient characteristics of β-Ga2O3 high electron mobility transistor (HEMT) are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps. An approximately 10 min, and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron (Fe)-doped β-Ga2O3 substrate and germanium (Ge)-doped β-Ga2O3 epitaxial layer respectively. On-state current lag is more severe due to widely reported defect trap EC - 0.82 eV over EC - 0.78 eV, −0.75 eV present in Iron (Fe)-doped β-Ga2O3 bulk crystals. A negligible amount of current degradation is observed in the latter case due to the trap level at EC - 0.98 eV. It is found that occupancy of ionized trap density varied mostly under the gate and gate-source area. This investigation of reversible current collapse phenomenon and assessment of recovery time in β-Ga2O3 HEMT is carried out through 2D device simulations using appropriate velocity and charge transport models. This work can further help in the proper characterization of β-Ga2O3 devices to understand temporary and permanent device degradation.

Original languageEnglish (US)
Article number102802
JournalJournal of Semiconductors
Volume41
Issue number10
DOIs
StatePublished - Oct 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Current collapse
  • Degradation
  • HEMT
  • Recovery time
  • Trapping effects
  • Traps
  • β-GaO

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