Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT

Engineering & Materials Science

• High electron mobility transistors 63%
• Drain current 46%
• Defects 37%
• Recovery 37%
• Iron 32%
• Epitaxial films 27%
• Population dynamics 26%
• Degradation 25%
• Germanium 24%
• Charge transfer 23%
• Crystals 18%
• Electrodes 14%
• Substrates 12%

Chemical Compounds

• Deep Defect Level 100%
• Electron Mobility 65%
• Drain Current 56%
• Interface Trap 30%
• Trap Density Measurement 27%
• Epitaxial Film 26%
• Time 19%
• Velocity 15%
• Charge Transfer 12%
• Simulation 11%
• Behavior as Electrode 9%
• Amount 7%

Physics & Astronomy

• high electron mobility transistors 56%
• recovery 44%
• traps 40%
• defects 30%
• degradation 13%
• iron 13%
• germanium 8%
• time lag 7%
• electrodes 5%
• characterization 5%
• crystals 4%
• simulation 3%