Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy

Amartya Sengupta; Hakan Altan; Aparajita Bandyopadhyay; John F. Federici; H. Grebel; Daniel Pham

doi:10.1364/fio.2005.fwf1

Investigation of Defect States of HfO₂ and SiO₂ on p type Silicon using THz Spectroscopy

Amartya Sengupta, Hakan Altan, Aparajita Bandyopadhyay, John F. Federici, H. Grebel, Daniel Pham

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO₂ than for SiO₂.

Original language	English (US)
Title of host publication	Frontiers in Optics, FiO 2005
Publisher	Optical Society of America (OSA)
ISBN (Print)	1557527970, 9781557527974
DOIs	https://doi.org/10.1364/fio.2005.fwf1
State	Published - 2005
Event	Frontiers in Optics, FiO 2005 - Tucson, AZ, United States Duration: Oct 16 2005 → Oct 21 2005

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Frontiers in Optics, FiO 2005
Country/Territory	United States
City	Tucson, AZ
Period	10/16/05 → 10/21/05

All Science Journal Classification (ASJC) codes

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/fio.2005.fwf1

Cite this

@inproceedings{10a72ea2109644baa503fdcdc5f64969,

title = "Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy",

abstract = "As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO2 than for SiO2.",

author = "Amartya Sengupta and Hakan Altan and Aparajita Bandyopadhyay and Federici, {John F.} and H. Grebel and Daniel Pham",

year = "2005",

doi = "10.1364/fio.2005.fwf1",

language = "English (US)",

isbn = "1557527970",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Frontiers in Optics, FiO 2005",

note = "Frontiers in Optics, FiO 2005 ; Conference date: 16-10-2005 Through 21-10-2005",

}

Sengupta, A, Altan, H, Bandyopadhyay, A, Federici, JF , Grebel, H & Pham, D 2005, Investigation of Defect States of HfO₂ and SiO₂ on p type Silicon using THz Spectroscopy. in Frontiers in Optics, FiO 2005. Optics InfoBase Conference Papers, Optical Society of America (OSA), Frontiers in Optics, FiO 2005, Tucson, AZ, United States, 10/16/05. https://doi.org/10.1364/fio.2005.fwf1

TY - GEN

T1 - Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy

AU - Sengupta, Amartya

AU - Altan, Hakan

AU - Bandyopadhyay, Aparajita

AU - Federici, John F.

AU - Grebel, H.

AU - Pham, Daniel

PY - 2005

Y1 - 2005

N2 - As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO2 than for SiO2.

AB - As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO2 than for SiO2.

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U2 - 10.1364/fio.2005.fwf1

DO - 10.1364/fio.2005.fwf1

M3 - Conference contribution

AN - SCOPUS:85088723205

SN - 1557527970

SN - 9781557527974

T3 - Optics InfoBase Conference Papers

BT - Frontiers in Optics, FiO 2005

PB - Optical Society of America (OSA)

T2 - Frontiers in Optics, FiO 2005

Y2 - 16 October 2005 through 21 October 2005

ER -