Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy

Amartya Sengupta, Hakan Altan, Aparajita Bandyopadhyay, John F. Federici, H. Grebel, Daniel Pham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO2 than for SiO2.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2005
PublisherOptical Society of America (OSA)
ISBN (Print)1557527970, 9781557527974
DOIs
StatePublished - 2005
EventFrontiers in Optics, FiO 2005 - Tucson, AZ, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherFrontiers in Optics, FiO 2005
Country/TerritoryUnited States
CityTucson, AZ
Period10/16/0510/21/05

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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