Investigation of defects in N+-CDS/P-CdTe solar cells

P. Kharangarh; D. Misra; G. E. Georgiou; Alan Delahoy; Z. Cheng; G. Liu; H. Opyrchal; T. Gessert; K. K. Chin

doi:10.1109/PVSC.2012.6317837

Investigation of defects in N⁺-CDS/P-CdTe solar cells

P. Kharangarh, D. Misra, G. E. Georgiou, Alan Delahoy, Z. Cheng, G. Liu, H. Opyrchal, T. Gessert, K. K. Chin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two sets of samples (CdTe solar cells) were investigated at 1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J ₀T²) vs. 1/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cu_i²⁺.

Original language	English (US)
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	1286-1290
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2012.6317837
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Keywords

CdTe solar cell
Shockley-Read-Hall recombination/generation (SRH R-G)
Temperature-dependent current density voltage (J-V-T) measurements
degradation
reliability

Access to Document

10.1109/PVSC.2012.6317837

Cite this

Kharangarh, P., Misra, D., Georgiou, G. E., Delahoy, A., Cheng, Z., Liu, G., Opyrchal, H., Gessert, T., & Chin, K. K. (2012). Investigation of defects in N⁺-CDS/P-CdTe solar cells. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 1286-1290). Article 6317837 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317837

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title = "Investigation of defects in N+-CDS/P-CdTe solar cells",

abstract = "Two sets of samples (CdTe solar cells) were investigated at 1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J 0T2) vs. 1/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cui2+.",

keywords = "CdTe solar cell, Shockley-Read-Hall recombination/generation (SRH R-G), Temperature-dependent current density voltage (J-V-T) measurements, degradation, reliability",

author = "P. Kharangarh and D. Misra and Georgiou, {G. E.} and Alan Delahoy and Z. Cheng and G. Liu and H. Opyrchal and T. Gessert and Chin, {K. K.}",

year = "2012",

doi = "10.1109/PVSC.2012.6317837",

language = "English (US)",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1286--1290",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Kharangarh, P, Misra, D, Georgiou, GE, Delahoy, A, Cheng, Z, Liu, G, Opyrchal, H, Gessert, T & Chin, KK 2012, Investigation of defects in N⁺-CDS/P-CdTe solar cells. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317837, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1286-1290, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317837

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T1 - Investigation of defects in N+-CDS/P-CdTe solar cells

AU - Kharangarh, P.

AU - Misra, D.

AU - Georgiou, G. E.

AU - Delahoy, Alan

AU - Cheng, Z.

AU - Liu, G.

AU - Opyrchal, H.

AU - Gessert, T.

AU - Chin, K. K.

PY - 2012

Y1 - 2012

N2 - Two sets of samples (CdTe solar cells) were investigated at 1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J 0T2) vs. 1/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cui2+.

AB - Two sets of samples (CdTe solar cells) were investigated at 1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J 0T2) vs. 1/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cui2+.

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KW - Shockley-Read-Hall recombination/generation (SRH R-G)

KW - Temperature-dependent current density voltage (J-V-T) measurements

KW - degradation

KW - reliability

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