Investigation of defects in N+-CDS/P-CdTe solar cells

P. Kharangarh, D. Misra, G. E. Georgiou, Alan Delahoy, Z. Cheng, G. Liu, H. Opyrchal, T. Gessert, K. K. Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two sets of samples (CdTe solar cells) were investigated at 1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J 0T2) vs. 1/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cui2+.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1286-1290
Number of pages5
DOIs
StatePublished - Nov 26 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period6/3/126/8/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Keywords

  • CdTe solar cell
  • Shockley-Read-Hall recombination/generation (SRH R-G)
  • Temperature-dependent current density voltage (J-V-T) measurements
  • degradation
  • reliability

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