Investigation of Dry Etching Damage Using P+-N Diodes

D. Misra, E. L. Heasell

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

p+-n diodes were fabricated on n-type, <111>, bulk silicon wafers using a standard bipolar process. Reactive ion etching, of silicon dioxide was performed over the diode junction. The forward current-voltage characteristics of the reactive ion-etched samples show an increase in recombination current and deterioration of the diode ideality factor, compared to the control unetched samples and samples prepared by normal wet etch process. The reverse I-V characteristics show a high leakage current and a lowered breakdown voltage. Annealing of these diodes at different temperatures shows a recovery in the I-V characteristics and an increase in breakdown voltage.

Original languageEnglish (US)
Pages (from-to)234-238
Number of pages5
JournalJournal of the Electrochemical Society
Volume136
Issue number1
DOIs
StatePublished - Jan 1989

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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