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Investigation of Dry Etching Damage Using P
+
-N Diodes
D. Misra
, E. L. Heasell
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
6
Scopus citations
Overview
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+
-N Diodes'. Together they form a unique fingerprint.
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Engineering & Materials Science
Dry etching
97%
Diodes
61%
Electric breakdown
37%
Reactive ion etching
22%
Current voltage characteristics
22%
Silicon wafers
20%
Leakage currents
17%
Silica
17%
Annealing
16%
Ions
15%
Deterioration
15%
Recovery
11%
Temperature
6%
Chemical Compounds
Breakdown Voltage
100%
Etching
60%
Leakage Current
43%
Silicon Dioxide
40%
Annealing
26%
Ion
13%