Gallium Oxide (Ga2O3) is an emerging material due to its suitable material properties and device characteristics. N-type Ga2O3 layer grown on semi-insulating Ga2O3 substrate results in depletion-mode MOSFET-an always 'on' device with negative threshold voltage. In absence of p-type doping in Ga2O3; conducting channel is available at VGS = 0V, however, for high voltage and power applications enhancement-mode (e-mode) transistors find more suitability. Hence, in this paper an e-mode 'T' shaped recessed gate novel Ga2O3 MOSFET (E-MOSFET) is designed and simulated using Atlas TCAD. The 'T' shape recessed gate depletes major portion of the active channel region and thus ensures off-operation at zero gate bias. The device achieves VTh of 0.05 V, and on-resistance (Ron) of 212 Ω-mm. The simulated device results in peak drain current density (IDmax) of around 40 mA/mm and ION/IOFF ratio greater than 1010. The device with source to drain spacing of 20μm achieved subthreshold swing (SS) of 123 mV/dec which is the best reported value and in good agreement with experimental results. Effects of gate length variation on device key-parameters such as RON and VTh are analyzed for optimum device performance; self-heating in the device at high voltages and resulting effects on device performance have been presented through extensive simulations. The device developments along with Ga2O3 material processing technologies can potentially achieve high performance power electronic devices.