Investigation of E-Mode beta-gallium oxide MOSFET for emerging nanoelectronics

Keyphrases

• Nanoelectronics 100%
• MOSFET 100%
• Gallium Oxide 100%
• Enhancement-mode (E-mode) 100%
• Ga2O3 100%
• Device Performance 40%
• T-shaped 40%
• Recessed Gate 40%
• Device Simulation 20%
• Material Properties 20%
• High Performance 20%
• High Power Applications 20%
• Transistor 20%
• Power Electronics 20%
• P-type Doping 20%
• Threshold Voltage 20%
• Gate Length 20%
• Gate Bias 20%
• Device Characteristics 20%
• Subthreshold Swing 20%
• Length Variation 20%
• Self-heating 20%
• Semi-insulating 20%
• Material Processing Technology 20%
• Emerging Materials 20%
• Property Characteristics 20%
• Ga2O3 MOSFET 20%
• High Voltage Application 20%
• Atlas-TCAD 20%
• Conducting Channels 20%
• Always-on Device 20%
• Drain Spacing 20%
• Device Development 20%
• Active Channel 20%
• Drain Current Density 20%
• Depletion Mode MOSFET 20%
• ION-IOFF 20%
• On-resistance 20%

Engineering

• Nanoelectronics 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Device Performance 50%
• Experimental Result 25%
• Processing Technology 25%
• Good Agreement 25%
• Key Parameter 25%
• Current Drain 25%
• Gate Length 25%
• Gate Bias 25%
• Channel Region 25%
• Power Electronic Device 25%
• Major Portion 25%
• Active Channel 25%
• Drain Spacing 25%

Material Science

• Oxide Compound 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gallium 100%
• Density 25%
• Materials Property 25%
• Material Processing 25%
• Transistor 25%