Investigation of electrically active defects in n-CdS/p-CdTe solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Current-voltage (J-V) and Capacitance-voltage (C-V) measurements of diode devices at different temperatures and illumination intensities are used to provide valuable information about non-idealities in the pn semiconductor junction and metal-semiconductor junction. In principle, continuous monitoring of this information can be used to improve diode and solar cell performance. In this paper we characterize the n +p CdTe on CdS solar cell. The activation energy derived from the temperature dependence of our solar cell J-V curves is consistent with trap assisted tunneling being the dominant carrier transport mechanism in the pn junction. Interpretation is complicated in the particular case of thin-film CdTe, by multiple non-shallow (not fully ionized) "doping" energy levels in the CdTe band gap are in reality, which are not distinct from "trap" energy levels. We use C-V profiling to further understand the concentrations of recombination centers as well as the interplay of the double acceptor Cd vacancy and the non- shallow acceptor Cu substitute of Cd.

Original languageEnglish (US)
Title of host publicationPhotovoltaics for the 21st Century 7
Pages233-240
Number of pages8
Volume41
Edition4
DOIs
StatePublished - Dec 1 2011
EventPhotovoltaics for the 21st Century 7 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Other

OtherPhotovoltaics for the 21st Century 7 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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