Investigation of Normally-Off β-Ga2 O3 Power MOSFET Using Ferroelectric Gate

Rajan Singh, G. Purnachandra Rao, Trupti Ranjan Lenka, S. V.S. Prasad, Kiran Dasari, Pulkit Singh, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we present a normally-off beta-gallium oxide (β-Ga2O3) metal–oxide–semiconductor field-effect transistor (MOSFET) with ferroelectric gate (Fe-G). The enhancement-mode (E-Mode) operations are achieved by depleting the charge carriers from the channel using the gate charge trapped in the ferroelectric material at the ferroelectric–dielectric (Fe-De) interface. The enhancement-mode (E-mode) operation has a negligible degradation in saturation current as compared to depletion-mode (D-Mode) operation. Ohmic-contacts access region resistances are minimized in the E-mode using highly-doped ohmic-contacts access regions. Furthermore, device achieves a significant low specific on-resistance (RON,sp) of 48 mΩ-cm2 in E-mode compared to 103 mΩ-cm2 in the D-mode. Furthermore, a high breakdown voltage (VBR) of 2250 V in E-mode combined with RON,sp brings in a figure of merit (VBR2/RON,sp) of 49 MW/cm2, showing its potential for futuristic wide bandgap (WBG) power devices. In addition, the E-mode device shows a hysteresis-free subthreshold swing (SS) of 65 mV/dec, which indicates its suitability for fast switching applications.

Original languageEnglish (US)
Title of host publicationMicro and Nanoelectronics Devices, Circuits and Systems - Select Proceedings of MNDCS 2023
EditorsTrupti Ranjan Lenka, Samar K. Saha, Lan Fu
PublisherSpringer Science and Business Media Deutschland GmbH
Pages189-197
Number of pages9
ISBN (Print)9789819944941
DOIs
StatePublished - 2024
Event3rd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, MNDCS 2023 - Silchar, India
Duration: Jan 29 2023Jan 31 2023

Publication series

NameLecture Notes in Electrical Engineering
Volume1067
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Conference

Conference3rd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, MNDCS 2023
Country/TerritoryIndia
CitySilchar
Period1/29/231/31/23

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

Keywords

  • Beta-gallium oxide (β-GaO) MOSFET
  • Contact resistance
  • Depletion-mode
  • Enhancement-mode
  • Ferroelectric
  • Hafnium-oxide (HfO)
  • On-resistance
  • Subthreshold swing

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