TY - GEN
T1 - Investigation of Normally-Off β-Ga2 O3 Power MOSFET Using Ferroelectric Gate
AU - Singh, Rajan
AU - Purnachandra Rao, G.
AU - Lenka, Trupti Ranjan
AU - Prasad, S. V.S.
AU - Dasari, Kiran
AU - Singh, Pulkit
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.
PY - 2024
Y1 - 2024
N2 - In this paper, we present a normally-off beta-gallium oxide (β-Ga2O3) metal–oxide–semiconductor field-effect transistor (MOSFET) with ferroelectric gate (Fe-G). The enhancement-mode (E-Mode) operations are achieved by depleting the charge carriers from the channel using the gate charge trapped in the ferroelectric material at the ferroelectric–dielectric (Fe-De) interface. The enhancement-mode (E-mode) operation has a negligible degradation in saturation current as compared to depletion-mode (D-Mode) operation. Ohmic-contacts access region resistances are minimized in the E-mode using highly-doped ohmic-contacts access regions. Furthermore, device achieves a significant low specific on-resistance (RON,sp) of 48 mΩ-cm2 in E-mode compared to 103 mΩ-cm2 in the D-mode. Furthermore, a high breakdown voltage (VBR) of 2250 V in E-mode combined with RON,sp brings in a figure of merit (VBR2/RON,sp) of 49 MW/cm2, showing its potential for futuristic wide bandgap (WBG) power devices. In addition, the E-mode device shows a hysteresis-free subthreshold swing (SS) of 65 mV/dec, which indicates its suitability for fast switching applications.
AB - In this paper, we present a normally-off beta-gallium oxide (β-Ga2O3) metal–oxide–semiconductor field-effect transistor (MOSFET) with ferroelectric gate (Fe-G). The enhancement-mode (E-Mode) operations are achieved by depleting the charge carriers from the channel using the gate charge trapped in the ferroelectric material at the ferroelectric–dielectric (Fe-De) interface. The enhancement-mode (E-mode) operation has a negligible degradation in saturation current as compared to depletion-mode (D-Mode) operation. Ohmic-contacts access region resistances are minimized in the E-mode using highly-doped ohmic-contacts access regions. Furthermore, device achieves a significant low specific on-resistance (RON,sp) of 48 mΩ-cm2 in E-mode compared to 103 mΩ-cm2 in the D-mode. Furthermore, a high breakdown voltage (VBR) of 2250 V in E-mode combined with RON,sp brings in a figure of merit (VBR2/RON,sp) of 49 MW/cm2, showing its potential for futuristic wide bandgap (WBG) power devices. In addition, the E-mode device shows a hysteresis-free subthreshold swing (SS) of 65 mV/dec, which indicates its suitability for fast switching applications.
KW - Beta-gallium oxide (β-GaO) MOSFET
KW - Contact resistance
KW - Depletion-mode
KW - Enhancement-mode
KW - Ferroelectric
KW - Hafnium-oxide (HfO)
KW - On-resistance
KW - Subthreshold swing
UR - http://www.scopus.com/inward/record.url?scp=85180552337&partnerID=8YFLogxK
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U2 - 10.1007/978-981-99-4495-8_14
DO - 10.1007/978-981-99-4495-8_14
M3 - Conference contribution
AN - SCOPUS:85180552337
SN - 9789819944941
T3 - Lecture Notes in Electrical Engineering
SP - 189
EP - 197
BT - Micro and Nanoelectronics Devices, Circuits and Systems - Select Proceedings of MNDCS 2023
A2 - Lenka, Trupti Ranjan
A2 - Saha, Samar K.
A2 - Fu, Lan
PB - Springer Science and Business Media Deutschland GmbH
T2 - 3rd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, MNDCS 2023
Y2 - 29 January 2023 through 31 January 2023
ER -