Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer

G. Purnachandra Rao; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

doi:10.1109/CODEC60112.2023.10466025

Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ Substrate with a Graded AlGaN Buffer

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga₂O₃ substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The findings exhibited that the graded buffer HEMT performed significantly better than normal HEMT in terms of transconductance, pinched-off, subthreshold behavior, and DC characteristics.

Original language	English (US)
Title of host publication	2023 8th International Conference on Computers and Devices for Communication, CODEC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350317176
DOIs	https://doi.org/10.1109/CODEC60112.2023.10466025
State	Published - 2023
Externally published	Yes
Event	8th International Conference on Computers and Devices for Communication, CODEC 2023 - Kolkata, India Duration: Dec 14 2023 → Dec 16 2023

Publication series

Name	2023 8th International Conference on Computers and Devices for Communication, CODEC 2023

Conference

Conference	8th International Conference on Computers and Devices for Communication, CODEC 2023
Country/Territory	India
City	Kolkata
Period	12/14/23 → 12/16/23

All Science Journal Classification (ASJC) codes

Instrumentation
Artificial Intelligence
Computer Networks and Communications
Computer Science Applications
Computer Vision and Pattern Recognition
Control and Optimization

Keywords

2DEG
AlGaN
GaN
Graded AlGaN
HEMT
polarization
β-GaO

Access to Document

10.1109/CODEC60112.2023.10466025

Cite this

Rao, G. P., Ranjan Lenka, T., & Trung Nguyen, H. P. (2023). Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ Substrate with a Graded AlGaN Buffer. In 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023 (2023 8th International Conference on Computers and Devices for Communication, CODEC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CODEC60112.2023.10466025

Rao, G. Purnachandra ; Ranjan Lenka, Trupti ; Trung Nguyen, Hieu Pham. / Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ Substrate with a Graded AlGaN Buffer. 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 8th International Conference on Computers and Devices for Communication, CODEC 2023).

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title = "Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer",

abstract = "In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The findings exhibited that the graded buffer HEMT performed significantly better than normal HEMT in terms of transconductance, pinched-off, subthreshold behavior, and DC characteristics.",

keywords = "2DEG, AlGaN, GaN, Graded AlGaN, HEMT, polarization, β-GaO",

author = "Rao, {G. Purnachandra} and {Ranjan Lenka}, Trupti and {Trung Nguyen}, {Hieu Pham}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 8th International Conference on Computers and Devices for Communication, CODEC 2023 ; Conference date: 14-12-2023 Through 16-12-2023",

year = "2023",

doi = "10.1109/CODEC60112.2023.10466025",

language = "English (US)",

series = "2023 8th International Conference on Computers and Devices for Communication, CODEC 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 8th International Conference on Computers and Devices for Communication, CODEC 2023",

address = "United States",

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Rao, GP, Ranjan Lenka, T & Trung Nguyen, HP 2023, Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ Substrate with a Graded AlGaN Buffer. in 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023. 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023, Institute of Electrical and Electronics Engineers Inc., 8th International Conference on Computers and Devices for Communication, CODEC 2023, Kolkata, India, 12/14/23. https://doi.org/10.1109/CODEC60112.2023.10466025

Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ Substrate with a Graded AlGaN Buffer. / Rao, G. Purnachandra; Ranjan Lenka, Trupti; Trung Nguyen, Hieu Pham.
2023 8th International Conference on Computers and Devices for Communication, CODEC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 8th International Conference on Computers and Devices for Communication, CODEC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer

AU - Rao, G. Purnachandra

AU - Ranjan Lenka, Trupti

AU - Trung Nguyen, Hieu Pham

PY - 2023

Y1 - 2023

N2 - In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The findings exhibited that the graded buffer HEMT performed significantly better than normal HEMT in terms of transconductance, pinched-off, subthreshold behavior, and DC characteristics.

AB - In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The findings exhibited that the graded buffer HEMT performed significantly better than normal HEMT in terms of transconductance, pinched-off, subthreshold behavior, and DC characteristics.

KW - 2DEG

KW - AlGaN

KW - GaN

KW - Graded AlGaN

KW - HEMT

KW - polarization

KW - β-GaO

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M3 - Conference contribution

AN - SCOPUS:85190064883

T3 - 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023

BT - 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 14 December 2023 through 16 December 2023

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Rao GP, Ranjan Lenka T, Trung Nguyen HP. Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ Substrate with a Graded AlGaN Buffer. In 2023 8th International Conference on Computers and Devices for Communication, CODEC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 8th International Conference on Computers and Devices for Communication, CODEC 2023). doi: 10.1109/CODEC60112.2023.10466025