TY - GEN
T1 - Investigation of ZnO:N and ZnO:(Al,N) films for solar driven hydrogen production
AU - Shet, Sudhakar
AU - Yan, Fa
AU - Ravindra, Nuggehalli
AU - Wang, Heli
AU - Turner, John
AU - Al-Jassim, Mowafak
PY - 2012
Y1 - 2012
N2 - ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping.
AB - ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping.
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U2 - 10.1002/9781118511350.ch25
DO - 10.1002/9781118511350.ch25
M3 - Conference contribution
AN - SCOPUS:84870531662
SN - 9781118273357
T3 - Ceramic Transactions
SP - 237
EP - 242
BT - Advances and Applications in Electroceramics II
PB - American Ceramic Society
T2 - Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011
Y2 - 16 October 2011 through 20 October 2011
ER -