Ion beam mixing for processing of nanostructure materials

S. Abedrabbo; D. E. Arafah; O. Gokce; L. S. Wielunski; M. Gharaibeh; O. Celik; N. M. Ravindra

doi:10.1007/BF02692536

Ion beam mixing for processing of nanostructure materials

S. Abedrabbo, D. E. Arafah, O. Gokce, L. S. Wielunski, M. Gharaibeh, O. Celik, N. M. Ravindra

Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO ₂-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO ₂ formed in the matrix.

Original language	English (US)
Pages (from-to)	834-839
Number of pages	6
Journal	Journal of Electronic Materials
Volume	35
Issue number	5
DOIs	https://doi.org/10.1007/BF02692536
State	Published - May 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Ion beam mixing (IBM)
Oxidation
SiGe

Access to Document

10.1007/BF02692536

Cite this

@article{ca66df677eda4807ba4247fe1c80271b,

title = "Ion beam mixing for processing of nanostructure materials",

abstract = "Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.",

keywords = "Ion beam mixing (IBM), Oxidation, SiGe",

author = "S. Abedrabbo and Arafah, {D. E.} and O. Gokce and Wielunski, {L. S.} and M. Gharaibeh and O. Celik and Ravindra, {N. M.}",

year = "2006",

month = may,

doi = "10.1007/BF02692536",

language = "English (US)",

volume = "35",

pages = "834--839",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Ion beam mixing for processing of nanostructure materials

AU - Abedrabbo, S.

AU - Arafah, D. E.

AU - Gokce, O.

AU - Wielunski, L. S.

AU - Gharaibeh, M.

AU - Celik, O.

AU - Ravindra, N. M.

PY - 2006/5

Y1 - 2006/5

N2 - Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.

AB - Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.

KW - Ion beam mixing (IBM)

KW - Oxidation

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=33745015585&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745015585&partnerID=8YFLogxK

U2 - 10.1007/BF02692536

DO - 10.1007/BF02692536

M3 - Article

AN - SCOPUS:33745015585

SN - 0361-5235

VL - 35

SP - 834

EP - 839

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Ion beam mixing for processing of nanostructure materials

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this