Ion beam mixing for processing of nanostructure materials

S. Abedrabbo, D. E. Arafah, O. Gokce, L. S. Wielunski, M. Gharaibeh, O. Celik, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.

Original languageEnglish (US)
Pages (from-to)834-839
Number of pages6
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Ion beam mixing (IBM)
  • Oxidation
  • SiGe


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