Ion beam mixing for processing of nanostructure materials

S. Abedrabbo; D. E. Arafah; O. Gokce; L. S. Wielunski; M. Gharaibeh; O. Celik; N. M. Ravindra

doi:10.1007/BF02692536

Ion beam mixing for processing of nanostructure materials

S. Abedrabbo
, D. E. Arafah
, O. Gokce
, L. S. Wielunski
, M. Gharaibeh
, O. Celik
, N. M. Ravindra

Physics

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO ₂-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO ₂ formed in the matrix.

Original language	English (US)
Pages (from-to)	834-839
Number of pages	6
Journal	Journal of Electronic Materials
Volume	35
Issue number	5
DOIs	https://doi.org/10.1007/BF02692536
State	Published - May 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Ion beam mixing (IBM)
Oxidation
SiGe

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10.1007/BF02692536

Cite this

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title = "Ion beam mixing for processing of nanostructure materials",

abstract = "Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.",

keywords = "Ion beam mixing (IBM), Oxidation, SiGe",

author = "S. Abedrabbo and Arafah, \{D. E.\} and O. Gokce and Wielunski, \{L. S.\} and M. Gharaibeh and O. Celik and Ravindra, \{N. M.\}",

year = "2006",

month = may,

doi = "10.1007/BF02692536",

language = "English (US)",

volume = "35",

pages = "834--839",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Ion beam mixing for processing of nanostructure materials

AU - Abedrabbo, S.

AU - Arafah, D. E.

AU - Gokce, O.

AU - Wielunski, L. S.

AU - Gharaibeh, M.

AU - Celik, O.

AU - Ravindra, N. M.

PY - 2006/5

Y1 - 2006/5

N2 - Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.

AB - Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.

KW - Ion beam mixing (IBM)

KW - Oxidation

KW - SiGe

UR - https://www.scopus.com/pages/publications/33745015585

UR - https://www.scopus.com/pages/publications/33745015585#tab=citedBy

U2 - 10.1007/BF02692536

DO - 10.1007/BF02692536

M3 - Article

AN - SCOPUS:33745015585

SN - 0361-5235

VL - 35

SP - 834

EP - 839

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Ion beam mixing for processing of nanostructure materials

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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