Ionic liquid gel gate tunable p -Si/MoS2heterojunction p - N diode

Kelotchi S. Figueroa, Nicholas J. Pinto, Chengyu Wen, A. T.Charlie Johnson, Meng Qiang Zhao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically robust heterojunctions at the p-Si/MoS2 interface. Electrical characterization of the device across the junction yielded an asymmetric I-V response similar to that of a p-n diode. The I-V response was electrostatically tunable via an ionic liquid gel gate. This is the first report demonstrating reversible gate control of the p-Si/MoS2 diode current by several orders of magnitude while lowering its turn-on voltage. Fermi energy level shifts within the MoS2 bandgap by the gate was believed to be responsible for the observed effects. The ease of fabrication, low operating voltages (<±2 V), and moderately high throughput currents (∼1 μA) are attractive features of this diode, especially for use in sensors and power saving electronics.

Original languageEnglish (US)
Article number125225
JournalAIP Advances
Issue number12
StatePublished - Dec 1 2020

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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