Ionic liquid gel gate tunable p -Si/MoS₂heterojunction p - N diode

Keyphrases

• Diode 100%
• Molybdenite 100%
• Ionic Liquid Gel 100%
• Gate-tunable 100%
• Si-SiO2 66%
• Order of Magnitude 33%
• High-throughput 33%
• Heterojunction 33%
• Band Gap 33%
• Electrical Characterization 33%
• Wafer 33%
• Observed Effects 33%
• Fermi Energy 33%
• Chemical Vapor Deposition 33%
• Power Saving 33%
• P-n Diode 33%
• Gate Control 33%
• Mechanical Robustness 33%
• Low-voltage Operation 33%
• SiO2 Substrate 33%
• Diode Current 33%
• Turn-on Voltage 33%
• Monolayer MoS2 33%
• Sensors Saving 33%
• Reversible Gates 33%
• Energy Level Shift 33%

Material Science

• Ionic Liquid 100%
• Heterojunction 50%
• Monolayers 50%
• Chemical Vapor Deposition 50%